Name |
Date |
Title of the thesis |
Catherine Barros |
July 4, 1996 |
Evaluation of
MOS technologies by measures of conduction and of ground noise. Application
in the hardening |
Alain Hoffmann |
April 23, 1993 |
Study of the
conduction and of the background noise of MOS structures to characterize the
hardening of their technology |
Mohammed Sadiki |
June 26, 1992 |
Contribution to
the study of the MOS tretode, Conduction and low frequencye background noise |
Mourad Benabdesalem |
July 2, 1991 |
Noise and
correlation in MOS transistors in regime of multiplication |
Pierre Vignaud |
May 25, 1990 |
Metrology and study of
the background noise of transistors with field effect AsGa MESFET and MODFET
Grid, canal and correlation noises |
Amani Kouadio |
February 1990 |
Study of the
MOS transistor with implanted canal : current-tension characteristics and ground
noise. Application in the amplifiers of reading devices with transfer of charges |
Rhayem Joseph |
June 13, 2000 |
Characterization and modelling
of the noise in 1/f of transistors with thin films elaborated on amorphous silicon |
Vildeuil Jean Charles |
July 20, 2000 |
Characterization and low
frequency modelling of PHEMT transistors AlGaAs / InGaAs / GaAs :
Grid, canal
and correlation noises |
